Abstract: The effect of source-drain (S-D) doping on short-channel effects (SCEs) of double-gate MOSFETs is investigated by analytically solving the 2-D potential function in subthreshold. The ...
Abstract: In nanoscale MOSFETs with sub-10 nm channels, the source-to-drain tunneling is expected to be a critical bottleneck, especially in III-V devices on account of their extremely low effective ...
We may receive a commission on purchases made from links. Before the winter rolls in, it's important that you prep your home for cold weather. While your property's gutters, chimney, and other areas ...
Looking for a reason to skip out on raking the leaves in your yard? We’ve got it for you: The fall chore is not only annoying, it’s also harmful to the environment. While many people spend hours and ...
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