Abstract: The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we ...
Abstract: The effect of source-drain (S-D) doping on short-channel effects (SCEs) of double-gate MOSFETs is investigated by analytically solving the 2-D potential function in subthreshold. The ...
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