Abstract: The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we ...
Abstract: In nanoscale MOSFETs with sub-10 nm channels, the source-to-drain tunneling is expected to be a critical bottleneck, especially in III-V devices on account of their extremely low effective ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback