Abstract: In this letter, we report a novel enhancement mode N-polar Deep Recess (NPDR) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Enhancement mode operation was achieved by ...
Abstract: This paper introduces a novel GAN-based data augmentation method for surface electromyography (sEMG) signals. By integrating channel attention mechanism and multi-scale feature fusion as ...
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