Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...
Bipolar Junction Transistors (BJTs): These were the earliest transistors (including the original 1947 point-contact device and later junction transistors). BJTs are made of three alternating ...
Ultra-Low VCE(sat) NPN and PNP Bipolar Transistors from Diodes Incorporated Maximize Power Density and Efficiency in Compact Automotive Designs Diodes Incorporated (Diodes) (Nasdaq: DIOD) today ...
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