The new power system in package couples an updated BCD driver with a high-performance GaN power transistor that has just ...
Chinese scientists unveil the world’s smallest ferroelectric transistor with ultralow power and tiny gate for future AI chips ...
Morning Overview on MSN
China unveils what it claims is the tiniest, most efficient transistor ever
Researchers at Peking University have built a transistor they say is the world’s smallest and most energy-efficient, ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...
Interesting Engineering on MSN
China claims to develop world’s smallest and most energy-efficient transistor
Researchers at Peking University in China have developed the world’s smallest and most energy-efficient ...
The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...
Power Transistor Market · GlobeNewswire Inc. Dublin, Jan. 29, 2026 (GLOBE NEWSWIRE) -- The "Power Transistor Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report ...
Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...
The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...
Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.
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