Nature

Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling

Atomically thin two-dimensional (2D) semiconductors—particularly transition metal dichalcogenides—are potential channel materials for post-silicon complementary metal–oxide–semiconductor (CMOS) ...
Nanowerk

CMOS Technology Explained

Complementary Metal-Oxide-Semiconductor (CMOS) technology is a vital part of modern electronics, used in designing and manufacturing integrated circuits (ICs) that power many digital devices. CMOS ...
Electronic Design

Keeping Pace with AI: Why Gate-All-Around Transistors are the Answer

Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
NextBigFuture

Breakthrough Pseudo CMOS Transistors for 1000 Times More Efficient Computing

As transistors are scaled to smaller dimensions, their static power increases. Combining two-dimensional (2D) channel materials with complementary metal–oxide–semiconductor (CMOS) logic architectures ...
EurekAlert!

New structure transistors for advanced technology node CMOS ICs

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Nature

Design of electronically tunable fractional-order elements based on distributed MOS transistor structures

This paper presents a design algorithm and implementation results for electronically tunable fractional-order elements (FOEs) with capacitive character based on distributed MOS transistor structures ...