A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Developers of gallium oxide power devices should draw on lessons learnt from the pioneers of compound semiconductor MOSFETs.
The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The ...
What is a power MOSFET? We all know how to use a diode to implement a switch. But we can only switch with it, not gradually control the signal flow. Furthermore, a diode acts as a switch depending on ...
Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...
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